PSMN2R0-60PS,127 NXP Semiconductors, PSMN2R0-60PS,127 Datasheet
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PSMN2R0-60PS,127
Specifications of PSMN2R0-60PS,127
Related parts for PSMN2R0-60PS,127
PSMN2R0-60PS,127 Summary of contents
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... PSMN2R0-60PS N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 Rev. 02 — 19 April 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60PS Graphic symbol G mbb076 3 Version SOT78 © NXP B.V. 2011. All rights reserved ...
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... Unclamped V sup GS 003aaf754 120 P der (%) 150 200 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60PS Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure ° -55 - ° 120 A ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN2R0-60PS Product data sheet N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 D 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60PS 003aaf753 =10 μ 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN2R0-60PS Product data sheet N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 Conditions see Figure 4 Vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60PS Min Typ Max - 0.22 0. 003aaf752 tp δ ...
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... Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 0.4 Ω 4.7 Ω G(ext) D All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60PS Min Typ Max = -55 ° ° 4 500 = 25 ° 100 - - 100 ...
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... DS 003aaf742 ( 120 0 I (A) D Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60PS Min Typ = 25 ° 003aaf743 = 175 ° ° © NXP B.V. 2011. All rights reserved. ...
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... V ( −60 1 (V) DS Fig 10. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60PS Input and reverse transfer capacitances as a function of gate-source voltage, typical values max typ min 0 60 120 junction temperature © NXP B.V. 2011. All rights reserved. ...
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... V (V) GS Fig 12. Drain-source on-state resistance as a function 003aaf747 120 180 T (°C) j Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60PS 10 DSon 8 4.8 V ( 100 of drain current; typical values V DS ...
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... Q (nC) G Fig 16. Input, output and reverse transfer capacitances 200 I S (A) 160 120 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60PS function of drain-source voltage; typical values 003aaf750 = 25 ° 0.9 1.2 V (V) ...
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... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60PS mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN2R0-60PS v.2 20110419 • Modifications: Status changed from objective to product. • Various changes to content. PSMN2R0-60PS v.1 20110117 PSMN2R0-60PS Product data sheet N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 Data sheet status ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60PS © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60PS Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 19 April 2011 Document identifier: PSMN2R0-60PS ...