PSMN2R0-60PS,127 NXP Semiconductors, PSMN2R0-60PS,127 Datasheet - Page 7
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PSMN2R0-60PS,127
Manufacturer Part Number
PSMN2R0-60PS,127
Description
MOSFET Power N-Ch 60V 2.2 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN2R0-60PS127.pdf
(15 pages)
Specifications of PSMN2R0-60PS,127
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 mOhms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Power Dissipation
338 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Gate Charge Qg
137 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
137nC @ 10V
Input Capacitance (ciss) @ Vds
9997pF @ 30V
Power - Max
338W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
Details
Other names
934065168127
NXP Semiconductors
Table 6.
[1]
PSMN2R0-60PS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
Measured 3 mm from package.
(S)
g
fs
250
200
150
100
50
0
drain current; typical values
Forward transconductance as a function of
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
30
…continued
60
90
All information provided in this document is subject to legal disclaimers.
003aaf742
I
D
(A)
Conditions
I
see
I
V
I
V
120
S
S
S
GS
GS
Rev. 02 — 19 April 2011
= 25 A; V
= 25 A; dI
= 25 A; dI
Figure 17
= 0 V; V
= 0 V; V
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
GS
S
S
DS
DS
/dt = -100 A/µs;
/dt = -100 A/µs;
Fig 6.
= 0 V; T
= 30 V
= 30 V
(A)
I
D
80
60
40
20
0
j
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
0
= 25 °C;
T
j
= 175 ° C
2
PSMN2R0-60PS
Min
-
-
-
4
Typ
0.8
57
80
T
j
= 25 ° C
V
© NXP B.V. 2011. All rights reserved.
GS
003aaf743
(V)
Max
1.2
-
-
6
Unit
V
ns
nC
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