PSMN2R0-60PS,127 NXP Semiconductors, PSMN2R0-60PS,127 Datasheet - Page 2

• Manufacturer Part Number: PSMN2R0-60PS,127
• Description: MOSFET Power N-Ch 60V 2.2 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN2R0-60PS,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 137 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 9997pF @ 30V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065168127

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN2R0-60PS
Product data sheet
Pin
1
2
3
mb
Type number
PSMN2R0-60PS
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to drain
[1]
[2]
Package
Name
TO-220AB
Continuous current limited by package.
Measured 3 mm from package.
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2011
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
Simplified outline
SOT78 (TO-220AB)
1 2
mb
3
PSMN2R0-60PS
Graphic symbol
mbb076
G
© NXP B.V. 2011. All rights reserved.
Version
SOT78
D
S
2 of 15