PSMN2R0-60PS,127 NXP Semiconductors, PSMN2R0-60PS,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN2R0-60PS,127
• Description: MOSFET Power N-Ch 60V 2.2 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN2R0-60PS,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 137 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 9997pF @ 30V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065168127

NXP Semiconductors
PSMN2R0-60PS
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
(A)
I
10
10
10
10
10
10
D
a
2.4
1.6
1.2
0.8
0.4
−1
−2
−3
−4
−5
−6
2
0
gate-source voltage
-60
of gate-source voltage; typical values
0
0
2
min
60
typ
4
120
max
V
All information provided in this document is subject to legal disclaimers.
GS
T
003aaf747
j
(°C)
(V)
03aa35
180
6
Rev. 02 — 19 April 2011
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
10
8
6
4
2
0
of drain current; typical values
0
V
V
V
V
GS(pl)
V
DS
GS(th)
GS
GS
(V) = 4.5
Q
GS1
50
I
Q
PSMN2R0-60PS
D
GS
Q
GS2
Q
4.8
G(tot)
Q
100
GD
5.0
20.0
© NXP B.V. 2011. All rights reserved.
5.5
I
003aaa508
003aaf751
D
6.0
10.0
(A)
150
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