PSMN2R0-60PS,127 NXP Semiconductors, PSMN2R0-60PS,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN2R0-60PS,127
• Description: MOSFET Power N-Ch 60V 2.2 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN2R0-60PS,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 137 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 9997pF @ 30V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065168127

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN2R0-60PS
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Continuous current limited by package
(A)
I
D
300
240
180
120
60
0
mounting base temperature.
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
(1)
100
150
All information provided in this document is subject to legal disclaimers.
T
003aaf754
mb
( ° C)
200
Rev. 02 — 19 April 2011
T
V
pulsed; t
T
pulsed; t
Conditions
T
V
see
T
V
V
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≥ 25 °C; T
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
≤ 60 V; R
p
p
≤ 10 µs; T
≤ 10 µs; T
Fig 2.
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
P
(%)
= 100 °C; see
= 25 °C; see
der
= 50 Ω; Unclamped
120
Figure 2
= 25 °C; I
80
40
0
mb
mb
function of mounting base temperature
Normalized total power dissipation as a
0
= 25 °C;
= 25 °C
GS
D
= 20 kΩ
= 120 A;
Figure 1
50
Figure 1
PSMN2R0-60PS
100
[1]
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
260
Max
60
60
20
120
120
1135
338
120
1135
913
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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