IRLU3105PBF International Rectifier, IRLU3105PBF Datasheet - Page 3

• Manufacturer Part Number: IRLU3105PBF
• Description: MOSFET N-CH 55V 25A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3105PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 57W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU3105PBF

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1000.00
100.00
1000
Fig 3. Typical Transfer Characteristics
0.01
Fig 1. Typical Output Characteristics
10.00
100
0.1
1.00
0.10
0.01
10
1
0.1
2.0
TOP
BOTTOM 2.0V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
15V
V DS , Drain-to-Source Voltage (V)
VGS
V GS , Gate-to-Source Voltage (V)
1
4.0
2.0V
20µs PULSE WIDTH
Tj = 25°C
V DS = 25V
20µs PULSE WIDTH
10
6.0
T J = 175°C
T J = 25°C
100
8.0
Fig 4. Typical Forward Transconductance
100
0.1
Fig 2. Typical Output Characteristics
10
1
30
25
20
15
10
5
0
0.1
TOP
BOTTOM 2.0V
0
T J = 175°C
10V
5.0V
3.0V
2.7V
2.5V
2.25V
15V
V DS , Drain-to-Source Voltage (V)
VGS
I D, Drain-to-Source Current (A)
Vs. Drain Current
10
1
2.0V
20
V DS = 25V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 175°C
T J = 25°C
10
30
3
100
40