IRLU3105PBF International Rectifier, IRLU3105PBF Datasheet - Page 5

• Manufacturer Part Number: IRLU3105PBF
• Description: MOSFET N-CH 55V 25A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3105PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 57W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU3105PBF

www.irf.com
0.01
30
25
20
15
10
0.1
10
0.00001
5
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
75
100
(THERMAL RESPONSE)
SINGLE PULSE
0.0001
°
125
150
t , Rectangular Pulse Duration (sec)
1
175
0.001
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig 10. Normalized On-Resistance
-60
I
D
-40
=
25A
-20
T , Junction Temperature
J
Vs. Temperature
1. Duty factor D =
2. Peak T
Notes:
0
20
J
= P
40
0.01
DM
60
x Z
t / t
1
80
thJC
P
2
DM
100 120 140 160 180
+ T
C
t
( C)
1
V
°
GS
t
2
=
10V
5
0.1