IRFZ46ZLPBF International Rectifier, IRFZ46ZLPBF Datasheet - Page 4

• Manufacturer Part Number: IRFZ46ZLPBF
• Description: MOSFET N-CH 55V 51A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ46ZLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13.6 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1460pF @ 25V
• Power - Max: 82W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 51 A
• Power Dissipation: 82 W
• Mounting Style: Through Hole
• Gate Charge Qg: 31 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ46ZLPBF

1000.00
100.00
4
10.00
10000
1000
1.00
0.10
100
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
C oss
C rss
C iss
T J = 25°C
f = 1 MHZ
10
V GS = 0V
100
1000
12.0
10.0
100
0.1
8.0
6.0
4.0
2.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
1
0
Fig 6. Typical Gate Charge vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 31A
Gate-to-Source Voltage
5
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
10
V DS = 44V
V DS = 28V
V DS = 11V
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
15
20
1msec
10msec
100µsec
100
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25
30
1000
35