IRFZ46ZLPBF International Rectifier, IRFZ46ZLPBF Datasheet - Page 5

• Manufacturer Part Number: IRFZ46ZLPBF
• Description: MOSFET N-CH 55V 51A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ46ZLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13.6 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1460pF @ 25V
• Power - Max: 82W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 51 A
• Power Dissipation: 82 W
• Mounting Style: Through Hole
• Gate Charge Qg: 31 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ46ZLPBF

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0.001
0.01
55
50
45
40
35
30
25
20
15
10
0.1
5
0
10
1
1E-006
25
Fig 9. Maximum Drain Current vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.02
0.20
0.01
0.10
0.05
T C , Case Temperature (°C)
Case Temperature
75
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
100
125
0.0001
150
t 1 , Rectangular Pulse Duration (sec)
175
0.001
J
J
1
Ci= i Ri
1
Ci
2.5
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
i Ri
R
-60 -40 -20 0
1
R
1
I D = 31A
V GS = 10V
2
R
2
2
0.01
T J , Junction Temperature (°C)
R
vs. Temperature
2
R
3
3
20 40 60 80 100 120 140 160 180
R
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
3
C
Ri (°C/W)
0.9322
0.5533
0.3545
0.1
0.000357
0.001133
0.004091
i (sec)
5
1