IRF1010EZLPBF International Rectifier, IRF1010EZLPBF Datasheet - Page 12

• Manufacturer Part Number: IRF1010EZLPBF
• Description: MOSFET N-CH 60V 75A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010EZLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 2810pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 140 W
• Mounting Style: Through Hole
• Gate Charge Qg: 58 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1010EZLPBF

12
Dimensions are shown in millimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
2
FEED DIRECTION
FEED DIRECTION
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
TRR
TRL
330.00
(14.173)
MAX.
1.85 (.073)
1.65 (.065)
This product has been designed and qualified for the Industrial market.
10.90 (.429)
10.70 (.421)
13.50 (.532)
12.80 (.504)
4.10 (.161)
3.90 (.153)
Visit us at www.irf.com for sales contact information. 07/2010
1.60 (.063)
1.50 (.059)
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
16.10 (.634)
15.90 (.626)
11.60 (.457)
11.40 (.449)
1.75 (.069)
1.25 (.049)
1.60 (.063)
1.50 (.059)
27.40 (1.079)
23.90 (.941)
26.40 (1.039)
24.40 (.961)
15.42 (.609)
15.22 (.601)
4
3
TAC Fax: [phone]
30.40 (1.197)
0.368 (.0145)
0.342 (.0135)
60.00 (2.362)
MAX.
www.irf.com
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
4
MIN.