IRF1010EZLPBF International Rectifier, IRF1010EZLPBF Datasheet - Page 2

• Manufacturer Part Number: IRF1010EZLPBF
• Description: MOSFET N-CH 60V 75A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010EZLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 2810pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 140 W
• Mounting Style: Through Hole
• Gate Charge Qg: 58 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1010EZLPBF


‚
ƒ
„
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
2
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
Repetitive rating; pulse width limited by
I
Pulse width
V
max. junction temperature. (See fig. 11).
R
recommended for use above this value.
T
Limited by T
SD
J
DSS
G
eff.
= 25 , I
/ T
175°C.
51A, di/dt
J
AS
J
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
1.0ms; duty cycle
= 51A, V
= 25°C (unless otherwise specified)
, starting T
260A/µs, V
Parameter
GS
Parameter
=10V. Part not
J
™
DD
= 25°C, L = 0.077mH,
V
2%.
(BR)DSS
,
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
…
†
‡
ˆ
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
60
C
as C
Limited by T
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
oss
0.058
2810
1440
oss
–––
–––
–––
–––
–––
–––
–––
420
200
320
510
–––
–––
–––
eff. is a fixed capacitance that gives the same charging time
6.8
4.5
7.5
58
19
21
19
90
38
54
41
54
while V
-200
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
340
Jmax
8.5
4.0
1.3
20
86
28
32
84
62
81
DS
, see Fig.12a, 12b, 15, 16 for typical repetitive
is rising from 0 to 80% V
2
V/°C
m
Pak, when mounted on 1" square PCB
µA
nA
nC
nH
nC
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 51A
= 51A
= 25°C, I
= 25°C, I
= 7.95
= 0V, I
= 10V, I
= V
= 25V, I
= 60V, V
= 60V, V
= 20V
= -20V
= 48V
= 10V
= 30V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
f
f
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 100µA
= 51A, V
= 51A, V
= 51A
= 51A
= 0V to 48V
= 1.0V, ƒ = 1.0MHz
= 48V, ƒ = 1.0MHz
= 0V
= 0V, T
f
DSS
www.irf.com
.
f
D
= 1mA
DD
GS
J
G
= 125°C
= 30V
= 0V
G
f
S
D
D
S