IRFH5010TR2PBF International Rectifier, IRFH5010TR2PBF Datasheet - Page 2

• Manufacturer Part Number: IRFH5010TR2PBF
• Description: MOSFET N-CH 100V 100A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFH5010TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 250 W
• Gate Charge Qg: 65 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.009Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5010TR2PBFTR

R
R
R
R
Thermal Resistance
Static @ T
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
Diode Characteristics
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
θJC
θJC
θJA
θJA
GS(th)
AS
SD
DS(on)
g
Q
Q
Q
Q
sw
oss
G
iss
oss
rss
rr
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
(<10s)
(Bottom)
(Top)
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Ù
Parameter
Parameter
gs2
™
+ Q
gd
)
g
g
Parameter
Time is dominated by parasitic Inductance
Min.
Min.
100
–––
–––
–––
–––
–––
–––
–––
206
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
4340
Typ.
Typ.
0.11
–––
–––
-8.3
–––
–––
–––
–––
–––
425
162
–––
–––
–––
256
7.5
4.3
1.2
8.6
65
11
20
30
24
18
12
27
34
9
100
Max. Units
Max. Units
-100
Typ.
–––
–––
––– mV/°C
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
400
384
9.0
4.0
1.3
20
98
51
h
V/°C
mΩ
nC
nC
nC
µA
nA
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
I
R
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 500A/µs
Typ.
–––
–––
–––
–––
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
J
J
G
= 50A
= 50A
=1.3Ω
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= V
= 100V, V
= 100V, V
= 20V
= -20V
= 25V, I
= 50V
= 10V
= 16V, V
= 50V, V
= 0V
= 25V
GS
Max.
227
50
, I
D
D
S
F
D
D
= 250uA
Conditions
GS
Conditions
GS
= 50A, V
= 50A, V
= 150µA
= 50A
= 50A
GS
GS
Max.
= 0V
= 10V
eÃ
0.5
15
35
22
= 0V
= 0V, T
e
D
GS
DD
= 1.0mA
www.irf.com
J
= 50V
G
= 0V
= 125°C
Units
mJ
A
Units
°C/W
e
D
S