IRFH5010TR2PBF International Rectifier, IRFH5010TR2PBF Datasheet - Page 5

• Manufacturer Part Number: IRFH5010TR2PBF
• Description: MOSFET N-CH 100V 100A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFH5010TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 250 W
• Gate Charge Qg: 65 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.009Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5010TR2PBFTR

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Fig 14a. Unclamped Inductive Test Circuit
25
20
15
10
Fig 12. On-Resistance vs. Gate Voltage
5
0
Fig 15a. Switching Time Test Circuit
2
R G
4
20V
V GS, Gate -to -Source Voltage (V)
V DS
6
t p
≤ 0.1
≤ 1
8
I AS
D.U.T
0.01 Ω
L
10
12
T J = 25°C
T J = 125°C
14
15V
I D = 50A
16
DRIVER
+
-
18
+
-
V DD
20
A
Fig 13. Maximum Avalanche Energy vs. Drain Current
1000
800
600
400
200
Fig 14b. Unclamped Inductive Waveforms
0
90%
V
25
10%
V
I
DS
AS
GS
Starting T J , Junction Temperature (°C)
Fig 15b. Switching Time Waveforms
50
t
d(on)
t
75
t p
r
TOP
BOTTOM 50A
100
t
d(off)
V
(BR)DSS
11.6A
125
I D
5.4A
t
f
150
5