TP0610K-T1-E3 Vishay, TP0610K-T1-E3 Datasheet

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TP0610K-T1-E3

Manufacturer Part Number
TP0610K-T1-E3
Description
MOSFET P-CH 60V 185MA SOT23-3
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Datasheets

Specifications of TP0610K-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
185mA
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
1.7nC @ 15V
Input Capacitance (ciss) @ Vds
23pF @ 25V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
6 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.185 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-185mA
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
6ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-3V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
6Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
TP0610K-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TP0610K-T1-E3
Manufacturer:
Vishay
Quantity:
2 350
Part Number:
TP0610K-T1-E3
Manufacturer:
VISHAY
Quantity:
4 521
Part Number:
TP0610K-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
TP0610K-T1-E3
Quantity:
70 000
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71411
S10-1283-Rev. G, 31-May-10
G
S
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Ordering Information: TP0610K-T1-E3 (Lead (Pb)-free)
V
1
2
DS
- 60
(V)
(SOT-23)
Top View
TO-236
6 at V
a
R
DS(on)
TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free)
b
GS
3
= - 10 V
a
D
(Ω)
a
Marking Code: 6Kwll
6K = Part Number Code for TP0610K
w = Week Code
ll = Lot Traceability
V
P-Channel 60 V (D-S) MOSFET
- 1 to - 3
GS(th)
(V)
A
I
D
= 25 °C, unless otherwise noted
- 185
(mA)
T
T
T
T
FEATURES
APPLICATIONS
BENEFITS
A
A
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• High-Side Switching
• Low On-Resistance: 6 Ω
• Low Threshold: - 2 V (typ.)
• Fast Swtiching Speed: 20 ns (typ.)
• Low Input Capacitance: 20 pF (typ.)
• 2000 V ESD Protection
• Compliant to RoHS directive 2002/95/EC
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid-State Relays
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven without Buffer
A
A
= 100 °C
= 100 °C
= 25 °C
= 25 °C
Definition
Memories, Transistors, etc.
®
Symbol
T
Power MOSFET
R
V
V
J,
I
P
DM
thJA
I
DS
GS
D
T
D
stg
- 55 to 150
Limit
- 185
- 115
- 800
± 20
- 60
350
140
350
Vishay Siliconix
TP0610K
www.vishay.com
°C/W
mW
Unit
mA
°C
V
1

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TP0610K-T1-E3 Summary of contents

Page 1

... Marking Code: 6Kwll 6K = Part Number Code for TP0610K Week Code ll = Lot Traceability Top View Ordering Information: TP0610K-T1-E3 (Lead (Pb)-free) TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current b Pulsed Drain Current a Power Dissipation ...

Page 2

... TP0610K Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance ...

Page 3

... 0.0 0.3 0.6 0 Total Gate Charge (nC) g Gate Charge Document Number: 71411 S10-1283-Rev. G, 31-May- 600 800 1000 1.2 1.5 1.8 TP0610K Vishay Siliconix 1200 °C J 900 125 °C 600 300 Gate-to-Source Voltage (V) GS Transfer Characteristics iss oss 8 C rss Drain-to-Source Voltage (V) ...

Page 4

... TP0610K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 100 T = 125 ° 0.00 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0 250 µA D 0.3 0.2 0.1 - 0.0 - 0.1 - 0 Junction Temperature (°C) J Threshold Voltage Variance Over Temperature 2 1 Duty Cycle = 0.5 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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