TP0610K-T1-E3 Vishay, TP0610K-T1-E3 Datasheet - Page 3
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TP0610K-T1-E3
Manufacturer Part Number
TP0610K-T1-E3
Description
MOSFET P-CH 60V 185MA SOT23-3
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Specifications of TP0610K-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
185mA
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
1.7nC @ 15V
Input Capacitance (ciss) @ Vds
23pF @ 25V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
6 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.185 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-185mA
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
6ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-3V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
6Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
TP0610K-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TP0610K-T1-E3
Manufacturer:
Vishay
Quantity:
2 350
Part Number:
TP0610K-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71411
S10-1283-Rev. G, 31-May-10
1.0
0.8
0.6
0.4
0.2
0.0
20
16
12
15
12
8
4
0
9
6
3
0
0.0
0
0
I
D
On-Resistance vs. Drain Current
0.3
= 500 mA
200
1
V
DS
Output Characteristics
Q
g
I
- Drain-to-Source Voltage (V)
D
0.6
- Total Gate Charge (nC)
V
- Drain Current (mA)
GS
Gate Charge
8 V
V
400
GS
2
V
= 4.5 V
DS
V
= 5 V
GS
= 30 V
0.9
= 10 V
600
3
V
GS
1.2
= 10 V
V
800
DS
4
1.5
= 48 V
5 V
4 V
7 V
6 V
1000
1.8
5
1200
900
600
300
1.8
1.5
1.2
0.9
0.6
0.3
0.0
40
32
24
16
0
8
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
V
GS
2
V
5
V
V
GS
Transfer Characteristics
GS
T
0
DS
= 10 V at 500 mA
J
= 0 V
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Capacitance
25
10
4
T
J
50
Vishay Siliconix
= - 55 °C
V
GS
C
15
C
C
6
oss
75
iss
rss
= 4.5 V at 25 mA
TP0610K
125 °C
www.vishay.com
100
20
25 °C
8
125
150
10
25
3