IRF7406TRPBF International Rectifier, IRF7406TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7406TRPBF
• Description: MOSFET P-CH 30V 5.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7406TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 70 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 5.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 39.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7406PBFTR; IRF7406TRPBF; IRF7406TRPBFTR

4
100
0.1
2500
2000
1500
1000
10
500
1
0.3
0
1
T = 150°C
J
-V
-V
SD
C
C
DS
C
oss
iss
rss
V
C
C
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.6
= 0V,
= C
= C
= C
T = 25°C
J
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
, C
0.9
ds
SHORTED
V
GS
= 0V
1.2
100
A
A
20
16
12
100
8
4
0
10
1
0
0.1
I
V
D
DS
T
T
Single Pulse
A
J
= -2.8A
= 25 C
= 150 C
= -24V
OPERATION IN THIS AREA LIMITED
-V
Q , Total Gate Charge (nC)
DS
°
°
G
, Drain-to-Source Voltage (V)
20
1
BY R
DS(on)
FOR TEST CIRCUIT
SEE FIGURE 12
40
www.irf.com
10
100us
1ms
10ms
60
100
A