IRF7406TRPBF International Rectifier, IRF7406TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7406TRPBF
• Description: MOSFET P-CH 30V 5.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7406TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 70 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 5.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 39.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7406PBFTR; IRF7406TRPBF; IRF7406TRPBFTR

www.irf.com
6.0
5.0
4.0
3.0
2.0
1.0
0.0
100
0.1
10
0.0001
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.001
75
SINGLE PULSE
100
0.01
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.1
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
≤ 0.1 %
t
≤ 1
r
J
DM
x Z
1
thJA
P
2
10
DM
t
d(off)
+ T
A
t
1
t
f
t
2
-
+
100
5