PSMN2R0-30YL,115 NXP Semiconductors, PSMN2R0-30YL,115 Datasheet - Page 7
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PSMN2R0-30YL,115
Manufacturer Part Number
PSMN2R0-30YL,115
Description
MOSFET N-CH 30V 100A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN2R0-30YL115.pdf
(14 pages)
Specifications of PSMN2R0-30YL,115
Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
3980pF @ 12V
Power - Max
97W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
97 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4679-2
934063069115
PSMN2R0-30YL T/R
934063069115
PSMN2R0-30YL T/R
NXP Semiconductors
PSMN2R0-30YL
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(pF)
10
10
10
10
10
10
8000
6000
4000
2000
(A)
C
I
D
-1
-2
-3
-4
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
Input and reverse transfer capacitances as a
0
0
2
min
1
4
C
C
iss
rss
6
typ
2
V
All information provided in this document is subject to legal disclaimers.
8
GS
003aac480
003aab271
V
max
(V)
GS
(V)
10
3
Rev. 4 — 10 March 2011
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source threshold voltage as a function of
V
R
(mΩ)
GS (th)
(V)
DSon
3.5
2.5
1.5
4
3
2
3
2
1
0
-60
of gate-source voltage; typical values
junction temperature
2
4
0
PSMN2R0-30YL
max
typ
min
60
6
120
8
© NXP B.V. 2011. All rights reserved.
V
003aac476
003a a c337
T
GS
j
(°C)
(V)
180
10
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