SI1012R-T1-GE3 Vishay, SI1012R-T1-GE3 Datasheet

MOSFET N-CH 20V 500MA SC-75A

SI1012R-T1-GE3

Manufacturer Part Number
SI1012R-T1-GE3
Description
MOSFET N-CH 20V 500MA SC-75A
Manufacturer
Vishay
Datasheet

Specifications of SI1012R-T1-GE3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
700 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
500mA
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.7 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.5 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
600mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
700mohm
Rds(on) Test Voltage Vgs
6V
Threshold Voltage Vgs Typ
900mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1012R-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1012R-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
56 375
Part Number:
SI1012R-T1-GE3
Manufacturer:
VISHAY
Quantity:
2 855
Part Number:
SI1012R-T1-GE3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
SI1012R-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1012R-T1-GE3
Quantity:
60 000
Company:
Part Number:
SI1012R-T1-GE3
Quantity:
70 000
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on FR4 board.
Document Number: 71166
S10-2432-Rev. D, 25-Oct-10
PRODUCT SUMMARY
ORDERING INFORMATION
Part Number
Si1012R-T1-GE3 (Lead (Pb)-free
and Halogen-free)
Si1012X-T1-GE3 (Lead (Pb)-free
and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
V
DS
20
(V)
G
S
0.70 at V
0.85 at V
1.25 at V
a
1
2
SC-75A or SC-89
R
DS(on)
Top View
J
b
b
GS
GS
GS
= 150 °C)
for SC-75
for SC-89
= 4.5 V
= 2.5 V
= 1.8 V
()
N-Channel 1.8 V (G-S) MOSFET
b
3
(SOT-416)
(SOT-490)
Package
SC-75A
SC-89
D
b
I
D
A
600
500
350
(mA)
Marking
= 25 °C, unless otherwise noted)
Code
C
A
T
T
T
T
T
T
A
A
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
BENEFITS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Gate-Source ESD Protected: 2000 V
• High-Side Switching
• Low On-Resistance: 0.7 
• Low Threshold: 0.8 V (typ.)
• Fast Switching Speed: 10 ns
• Compliant to RoHS Directive 2002/95/EC
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
Definition
Memories
Symbol
T
J
ESD
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
®
Power MOSFET: 1.8 V Rated
600
400
275
175
275
160
5 s
90
- 55 to 150
1000
2000
± 6
20
Steady State
Vishay Siliconix
500
350
250
150
250
140
80
Si1012R/X
www.vishay.com
Unit
mW
mA
°C
V
V
1

Related parts for SI1012R-T1-GE3

SI1012R-T1-GE3 Summary of contents

Page 1

... 1. 1 SC-75A or SC- Top View ORDERING INFORMATION Part Number Si1012R-T1-GE3 (Lead (Pb)-free and Halogen-free) Si1012X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si1012R/X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) A Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Gate Charge Document Number: 71166 S10-2432-Rev. D, 25-Oct- °C, unless otherwise noted thru 1 2.0 2 600 800 1000 0.6 0.8 Si1012R/X Vishay Siliconix 1200 °C C 1000 25 °C 800 125 °C 600 400 200 0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 100 ...

Page 4

... Si1012R/X Vishay Siliconix TYPICAL CHARACTERISTICS (T 1000 T = 125 °C J 100 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.3 0 0.1 - 0 Temperature (°C) J Threshold Voltage Variance vs. Temperature www.vishay.com °C, unless otherwise noted °C J 0.8 1.0 1.2 1 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71166. Document Number: 71166 S10-2432-Rev. D, 25-Oct- °C, unless otherwise noted Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Si1012R/X Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 833 ° ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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