SI1012R Vishay Siliconix, SI1012R Datasheet

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SI1012R

Manufacturer Part Number
SI1012R
Description
N-Channel 1.8-V (G-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
b.
Document Number: 71166
S-02464—Rev. A, 25-Oct-00
D High-Side Switching
D Low On-Resistance: 0.7 W
D Low Threshold: 0.8 V (typ)
D Fast Swtiching Speed: 10 ns
D 1.8-V Operation
D Gate-Source ESD Protection
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (diode conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
V
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board.
DS
20
(V)
a
J
b
b
0.85 @ V
1.25 @ V
0.70 @ V
= 150_C)
for SC-75
for SC-89
Parameter
r
DS(on)
_
GS
GS
GS
b
b
= 2.5 V
= 1.8 V
= 4.5 V
N-Channel 1.8-V (G-S) MOSFET
(W)
G
S
b
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
SC-75A or SC-89
1
2
Top View
T
T
T
T
T
T
I
A
A
A
A
A
A
D
New Product
= 25_C
= 85_C
= 25_C
= 85_C
= 25_C
= 85_C
600
500
350
(mA)
_
3
D
Symbol
T
Ordering Information:
SC-75A (SOT– 416):
Si1012R–Marking Code : C
SC-89 (SOT– 490):
Si1012X–Marking Code: A
ESD
J
V
V
I
P
, T
I
DM
I
GS
DS
D
S
D
stg
D Drivers: Relays, Solenoids, Lamps,
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
Hammers, Displays, Memories
5 secs
600
400
275
175
275
160
90
–55 to 150
1000
2000
"6
20
Steady State
Vishay Siliconix
500
350
250
150
250
140
80
Si1012R/X
www.vishay.com
Unit
mW
mA
_C
V
V
1

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SI1012R Summary of contents

Page 1

... D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation SC-75A or SC-89 Ordering Information: 1 SC-75A (SOT– 416): Si1012R–Marking Code : SC-89 (SOT– 490): Si1012X–Marking Code Top View _ Symbol ...

Page 2

... Si1012R/X Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 71166 S-02464—Rev. A, 25-Oct-00 New Product _ 100 2 4 800 1000 1.60 1.40 1.20 1.00 0.80 0.60 0.6 0.8 1.0 1.2 1.4 Si1012R/X Vishay Siliconix Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 600 350 mA D – ...

Page 4

... Si1012R/X Vishay Siliconix Threshold Voltage Variance vs. Temperature 0 0.1 –0.0 –0.1 –0.2 –0.3 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – www.vishay.com 4 New Product _ 3.0 2.5 2.0 1.5 1.0 0.5 0.0 75 100 125 BV vs. Temperature ...

Page 5

... Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Document Number: 71166 S-02464—Rev. A, 25-Oct-00 New Product _ –2 – Square Wave Pulse Duration (sec) Si1012R/X Vishay Siliconix 1 10 www.vishay.com 5 ...

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