SI1012R Vishay Siliconix, SI1012R Datasheet - Page 3

• Manufacturer Part Number: SI1012R
• Description: N-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71166
S-02464—Rev. A, 25-Oct-00
1000
4.0
3.2
2.4
1.6
0.8
0.0
100
10
5
4
3
2
1
0
1
0
0.0
0.0
V
I
T
D
J
DS
Source-Drain Diode Forward Voltage
0.2
= 250 mA
= 25_C
On-Resistance vs. Drain Current
200
= 10 V
V
0.2
SD
Q
T
0.4
g
J
I
– Source-to-Drain Voltage (V)
D
= 125_C
– Total Gate Charge (nC)
– Drain Current (mA)
400
Gate Charge
0.6
V
GS
0.4
= 1.8 V
T
J
0.8
600
= –55_C
1.0
V
0.6
V
GS
800
GS
= 2.5 V
= 4.5 V
1.2
1000
_
0.8
1.4
New Product
1.60
1.40
1.20
1.00
0.80
0.60
100
80
60
40
20
5
4
3
2
1
0
0
–50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
–25
1
4
T
V
V
C
J
DS
GS
C
– Junction Temperature (_C)
oss
0
iss
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
2
I
D
Capacitance
= 350 mA
I
D
8
25
= 200 mA
Vishay Siliconix
3
V
I
D
GS
50
= 600 mA
12
= 4.5 V
Si1012R/X
4
75
V
I
D
GS
= 350 mA
16
www.vishay.com
= 1.8 V
5
100
125
20
6
3