ZXMN20B28KTC Diodes Zetex, ZXMN20B28KTC Datasheet

MOSFET N-CH 200V 1.5A DPAK

ZXMN20B28KTC

Manufacturer Part Number
ZXMN20B28KTC
Description
MOSFET N-CH 200V 1.5A DPAK
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN20B28KTC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
750 mOhm @ 2.75A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.5A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
8.1nC @ 5V
Input Capacitance (ciss) @ Vds
358pF @ 25V
Power - Max
2.2W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN20B28KTCTR
Ordering Information
Marking Information
Product Summary
Description and Applications
This MOSFET features low on-resistance, fast switching and a high
avalanche withstand capability, making it ideal for high efficiency
power management applications.
Note:
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
SLIC line drivers for VoIP applications
Transformer driving switch
Power management functions
Motor control
Uninterrupted power supply
ZXMN20B28KTC
V
(BR)DSS
200V
Product
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Top View
TO252-3L
750mΩ @ V
780mΩ @ V
R
DS(on)
(Note 1)
GS
GS
See below
Marking
= 10V
= 5V
T
A
2.3A
2.3A
= 25°C
YYWW
I
20B28
ZXMN
D
Reel size (inches)
Pin Out – Top View
www.diodes.com
G
1 of 8
13
D
D
ZXMN = Product Type Marking Code, Line 1
20B28 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
Features and Benefits
Mechanical Data
200V N-CHANNEL ENHANCEMENT MODE MOSFET
S
100% Unclamped Inductive Switch (UIS) test in production
High avalanche energy pulse withstand capability
Low gate drive voltage (Logic level capable)
Low input capacitance
Low on-resistance
Fast switching speed
Qualified to AEC-Q101 Standards for High Reliability
“Green” Component and RoHS compliant (Note 1)
Case: TO252-3L
Case Material: Molded Plastic “Green” Molding Compound,
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)
Tape width (mm)
Diodes Incorporated
A Product Line of
16
G
Equivalent Circuit
S
D
ZXMN20B28K
Quantity per reel
2,500
© Diodes Incorporated
October 2009

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ZXMN20B28KTC Summary of contents

Page 1

... Ordering Information (Note 1) Product Marking ZXMN20B28KTC See below Note: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details our website. ...

Page 2

Maximum Ratings @T = 25°C unless otherwise specified A Characteristic Drain-Source voltage Gate-Source voltage Single Pulsed Avalanche Energy Single Pulsed Avalanche Current Repetitive Avalanche Energy Repetitive Avalanche Current Continuous Drain current V = 10V GS Pulsed Drain current V = ...

Page 3

Thermal Characteristics 10 R DS(on) Limited 100m 100ms 10m T =25°C amb 25mm x 25mm 1oz FR4 Drain-Source Voltage (V) DS Safe Operating Area 60 T =25°C amb 50 25mm x 25mm 1oz FR4 ...

Page 4

Electrical Characteristics @T Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 8) Forward Transconductance (Notes 8 & 9) Diode Forward Voltage (Note 8) Reverse recovery time ...

Page 5

Typical Characteristics T = 25° 0.1 0.01 0.1 V Drain-Source Voltage (V) DS Output Characteristics V = 10V 150° Gate-Source Voltage (V) GS Typical Transfer Characteristics 0.01 0.1 ...

Page 6

Typical Characteristics - continued 800 600 400 200 C RSS 0 0.01 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test Circuits Charge Basic gate charge waveform ...

Page 7

Package Outline Dimensions DIM Inches Min Max A 0.086 0.094 A1 - 0.005 b 0.020 0.035 b2 0.030 0.045 b3 0.205 0.215 c 0.018 0.024 c2 0.018 0.023 D 0.213 0.245 D1 0.205 - E 0.250 0.265 E1 0.170 - ...

Page 8

Suggested Pad Layout DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE ...

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