ZXMN20B28KTC Diodes Zetex, ZXMN20B28KTC Datasheet - Page 6

• Manufacturer Part Number: ZXMN20B28KTC
• Description: MOSFET N-CH 200V 1.5A DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN20B28KTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 750 mOhm @ 2.75A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 358pF @ 25V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN20B28KTCTR

Typical Characteristics - continued
Test Circuits
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
90%
10%
V
V
DS
GS
V
G
800
600
400
200
Q
Capacitance v Drain-Source Voltage
GS
t
0.01
0
Basic gate charge waveform
d(on)
Switching time waveforms
t
(on)
V
t
DS
r
- Drain - Source Voltage (V)
0.1
Q
Q
G
C
GD
RSS
Charge
1
t
d(off)
t
(on)
10
t
r
V
f = 1MHz
C
GS
ISS
= 0V
C
www.diodes.com
OSS
100
6 of 8
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
0
Switching time test circuit
Gate charge test circuit
2
12V
R
Q - Charge (nC)
4
G
Diodes Incorporated
A Product Line of
6
V
regulator
Current
GS
50k
I
8
G
V
GS
10
R
Same as
D.U.T
V
I
D
D
D.U.T
DS
= 6.5A
12
= 120V
V
ZXMN20B28K
DS
14
I
V
D
© Diodes Incorporated
DS
V
October 2009
DD