ZXMN6A11GTA Diodes Zetex, ZXMN6A11GTA Datasheet - Page 2

• Manufacturer Part Number: ZXMN6A11GTA
• Description: MOSFET N-CH 60V 3.1A SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A11GTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 40V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN6A11GTR

Thermal Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300μs.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
measured when operating in a steady-state condition.
Characteristic
Characteristic
@T
A
V
V
= 25°C unless otherwise specified
GS
GS
= 10V
= 10V
@T
A
= 25°C unless otherwise specified
(Note 3)
T
(Note 2)
(Note 4)
(Note 3)
(Note 4)
(Note 2)
(Note 3)
(Note 2)
(Note 3)
(Note 5)
A
= 70°C (Note 3)
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Symbol
Symbol
T
J,
V
R
R
V
I
I
P
DSS
DM
I
I
SM
T
θJA
θJL
GS
D
S
D
STG
Diodes Incorporated
A Product Line of
-55 to +150
Value
Value
15.6
15.6
62.5
32.0
±20
4.4
2.0
3.9
9.8
3.5
3.1
60
16
31
5
ZXMN6A11G
© Diodes Incorporated
mW/°C
Units
October 2010
°C/W
Unit
°C
W
V
A