ZXMN6A11GTA Diodes Zetex, ZXMN6A11GTA Datasheet - Page 3

• Manufacturer Part Number: ZXMN6A11GTA
• Description: MOSFET N-CH 60V 3.1A SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A11GTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 40V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN6A11GTR

Thermal Characteristics
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
100m
10m
10
60
50
40
30
20
10
100µ
0
1
Transient Thermal Impedance
R
Limited
25mm x 25mm
25mm x 25mm
DS(on)
D=0.5
D=0.2
T
T
1oz FR4
1oz FR4
1m
V
amb
amb
Safe Operating Area
DC
DS
=25°C
=25°C
1
1s
Drain-Source Voltage (V)
10m 100m
Pulse Width (s)
100ms
10ms
D=0.1
1
1ms
10
D=0.05
100µs
10
Single Pulse
100
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2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
100
10
100µ
1
0
20
Pulse Power Dissipation
1m
40
Temperature (°C)
10m 100m
Derating Curve
Diodes Incorporated
Pulse Width (s)
A Product Line of
60
80
1
100 120 140 160
25mm x 25mm
25mm x 25mm
Single Pulse
10
T
1oz FR4
1oz FR4
amb
=25°C
ZXMN6A11G
100
© Diodes Incorporated
1k
October 2010