SI2308DS-T1-E3 Vishay, SI2308DS-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI2308DS-T1-E3
• Description: MOSFET N-CH 60V 2A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2308DS-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2308DS-T1-E3TR

Si2308DS
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
MOSFET SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
a
a
a
a
V
Symbol
R
V
(BR)DSS
I
t
t
I
I
C
D(on)
DS(on)
V
C
C
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
J
oss
t
SD
t
iss
rss
fs
gs
gd
r
f
g
g
= 25 °C, unless otherwise noted
V
V
V
I
DS
D
DS
DS
≅ 1 A, V
= 30 V, V
= 60 V, V
V
V
V
= 25 V, V
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
GS
DS
DD
DS
GS
I
S
Test Conditions
≥ 4.5 V, V
= 0 V, V
≥ 4.5 V, V
= V
= 1 A, V
= 0 V, I
= 60 V, V
= 4.5 V, I
= 4.5 V, I
= 30 V, R
= 10 V, I
GEN
GS
GS
GS
GS
, I
= 4.5 V, R
= 10 V, I
= 0 V, T
D
GS
= 0 V, f = 1 MHz
D
GS
GS
D
= 250 µA
GS
D
D
= 250 µA
GS
L
= ± 20 V
= 2.0 A
= 1.7 A
= 2.0 A
= 0 V
= 30 Ω
= 4.5 V
= 10 V
= 0 V
J
D
g
= 55 °C
= 2.0 A
= 6 Ω
Min.
1.5
0.5
60
6
4
0.125
0.155
Typ.
0.77
240
4.6
4.8
0.8
1.0
50
15
10
17
7
6
S09-0133-Rev. D, 02-Feb-09
Document Number: 70797
± 100
Max.
0.16
0.22
3.0
0.5
1.2
3.3
10
10
15
20
35
15
Unit
nC
nA
µA
pF
ns
Ω
Ω
V
A
S
V