SI4447DY-T1-E3 Vishay, SI4447DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4447DY-T1-E3
• Description: MOSFET P-CH 40V 3.3A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4447DY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 54 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 805pF @ 20V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.054 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -4.5A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 72mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: -2.2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4447DY-T1-E3TR

Si4447DY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate-Source Threshold Voltage
V
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
20
16
12
8
4
0
0
a
a
1
V
DS
a
Output Characteristics
- Drain-to-Source Voltage (V)
J
V
GS
= 25 °C, unless otherwise noted
= 10 V thru 4 V
2
a
3
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
I
I
C
DS(on)
V
C
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
DS
g
Q
R
Q
t
SD
oss
t
t
rss
iss
rr
fs
gs
gd
r
f
3 V
g
rr
g
/T
/T
J
4
J
V
V
DS
V
I
D
DS
DS
≅ - 1 A, V
5
= - 20 V, V
I
= - 40 V, V
F
V
V
= - 20 V, V
V
V
V
V
V
V
I
= 1.7 A, dI/dt = 100 A/µs
DS
DS
GS
GS
DS
DS
S
DD
DS
= - 1.7 A, V
Test Conditions
= V
≤ - 5 V, V
= - 10 V, I
= - 15 V, I
= - 15 V, I
= 0 V, V
= - 40 V, V
= - 15 V, R
I
D
GEN
f = 1 MHz
GS
= - 250 µA
GS
GS
GS
, I
= - 4.5 V, I
= - 10 V, R
D
GS
= 0 V, T
= 0 V, f = 1 MHz
GS
D
= - 250 µA
D
D
GS
GS
L
= ± 16 V
= - 4.5 A
= - 4.5 A
= - 4.5 A
= - 10 V
= 15 Ω
= 0 V
= 0 V
J
20
16
12
D
8
4
0
= 55 °C
g
= - 4.5 A
0.0
= 6 Ω
0.5
V
1.0
GS
Transfer Characteristics
Min.
- 0.8
- 20
- Gate-to-Source Voltage (V)
1.5
- 0.79
0.045
0.059
S09-0322-Rev. B, 02-Mar-09
Typ.
11.5
- 40
805
120
3.4
3.6
2.0
13
85
12
74
38
27
17
9
2
8
Document Number: 73662
T
C
2.5
25 °C
= - 55 °C
± 100
0.054
0.072
Max.
- 2.2
- 1.2
- 10
110
- 1
14
18
13
18
60
45
26
3.0
125 °C
3.5
mV/°C
Unit
nA
µA
pF
nC
nC
ns
Ω
Ω
V
A
S
V
4.0