ZXMN10A11GTC Diodes Zetex, ZXMN10A11GTC Datasheet
ZXMN10A11GTC
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ZXMN10A11GTC Summary of contents
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Product Summary V R (BR)DSS DS(on) 350mΩ 10V GS 100V 450mΩ 6.0V GS Description and Applications This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ...
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Maximum Ratings @T = 25°C unless otherwise specified A Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current V = 10V GS Pulsed Drain current V = 10V GS Continuous Source current (Body diode) Pulsed Source current (Body diode) Thermal Characteristics ...
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Thermal Characteristics 10 R DS(on) Limited 1 DC 100m 1s 100ms 10ms Single Pulse 10m T =25°C amb 1 V Drain-Source Voltage (V) DS Safe Operating Area 70 T =25°C 60 amb 50 40 D=0 D=0 ...
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Electrical Characteristics @T Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 5) Forward Transconductance (Notes 5 & 6) Diode Forward Voltage (Note 5) Reverse recovery time ...
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Typical Characteristics 25°C 1 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 150°C 0 Gate-Source Voltage (V) GS Typical Transfer Characteristics 100 4V 3. ...
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Typical Characteristics - continued Test Circuits Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms ZXMN10A11G Document Number DS32056 Rev. 6 ...
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Package Outline Dimensions DIM Millimeters Min Max A - 1.80 A1 0.02 0.10 A2 1.55 1.65 b 0.66 0.84 b2 2.90 3.10 C 0.23 0.33 Suggested Pad Layout ZXMN10A11G Document Number DS32056 Rev Inches DIM Millimeters Min ...
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY ...