ZXMN10A11GTC Diodes Zetex, ZXMN10A11GTC Datasheet - Page 3

• Manufacturer Part Number: ZXMN10A11GTC
• Description: MOSFET N-CHAN 100V SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXMN10A11GTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 274pF @ 50V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
ZXMN10A11G
Document Number DS32056 Rev. 6 - 2
100m
10m
70
60
50
40
30
20
10
10
100µ
0
1
Transient Thermal Impedance
R
Limited
Single Pulse
D=0.5
D=0.2
DS(on)
T
T
amb
amb
1
1m
V
DC
Safe Operating Area
=25°C
=25°C
DS
1s
Drain-Source Voltage (V)
10m 100m
100ms
Pulse Width (s)
10ms
10
1ms
D=0.1
1
D=0.05
100µs
Single Pulse
10
100
100
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100
2.0
1.6
1.2
0.8
0.4
0.0
10
100µ
1
0
20
Pulse Power Dissipation
1m
40
Temperature (°C)
Derating Curve
10m 100m
Diodes Incorporated
Pulse Width (s)
A Product Line of
60
80
1
100 120 140 160
Single Pulse
10
T
amb
ZXMN10A11G
=25°C
100
© Diodes Incorporated
1k
January 2010