NDS8435A Fairchild Optoelectronics Group, NDS8435A Datasheet - Page 5

• Manufacturer Part Number: NDS8435A
• Description: MOSFET P-CH 30V 7.9A 8-SOIC
• Manufacturer: Fairchild Optoelectronics Group

Specifications of NDS8435A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 7.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q4210279C

Typical Electrical Characteristics
V
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
GS
Figure 9. Capacitance Characteristics
Figure 11. Switching Test Circuit
5 0 0
3 0 0
1 5 0
1.125
1.075
1.025
0.975
0.925
1.05
0.95
1.1
0 .1
Figure 7. Breakdown Voltage
1
-50
Variation with Temperature.
f = 1 MHz
V
I
D
R
GS
0 .2
= -250µA
-25
GEN
= 0 V
-V
DS
T
0
0 .5
J
V
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
IN
G
2 5
1
5 0
-V
2
D
S
DD
7 5
R
.
5
L
1 0 0
D U T
.
(continued)
1 0
1 2 5
C rss
C iss
C oss
V
2 0
O U T
1 5 0
3 0
V
t
V
OUT
d(on)
IN
Figure 8. Body Diode Forward Voltage Variation
1 0 %
0.0001
0.001
1 0
0.01
8
6
4
2
0
0.1
Figure 10. Gate Charge Characteristics.
20
0
Figure 12. Switching Waveforms
5
1
I
0
D
= -7.9A
V
t
GS
5 0 %
o n
1 0 %
= 0V
0.2
-V
1 0
SD
t
, BODY DIODE FORWARD VOLTAGE (V)
9 0 %
PULSE WIDTH
r
0.4
Q
g
with Source Current and
T = 125°C
2 0
, GATE CHARGE (nC)
J
t
0.6
d(off)
Temperature
25°C
-55°C
5 0 %
3 0
0.8
V
9 0 %
DS
.
t
= -5V
1 0 %
off
9 0 %
.
1
4 0
-15
NDS8435A Rev.C
INVERTED
t
f
1.2
-10
5 0
1