IRFR9310PBF Vishay, IRFR9310PBF Datasheet - Page 3
![MOSFET P-CH 400V 1.8A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR9310PBF
Manufacturer Part Number
IRFR9310PBF
Description
MOSFET P-CH 400V 1.8A DPAK
Manufacturer
Vishay
Specifications of IRFR9310PBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
7 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
50000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-1.8A
Drain Source Voltage Vds
-400V
On Resistance Rds(on)
7ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91284
S10-1139-Rev. C, 17-May-10
0.1
0.1
10
10
1
1
1
1
TOP
BOTTOM
TOP
BOTTOM
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
-V
-V
DS
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
10
10
-4.5V
20μs PULSE WIDTH
T = 25 C
20μs PULSE WIDTH
T = 150 C
J
J
-4.5V
°
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
°
100
100
Fig. 4 - Normalized On-Resistance vs. Temperature
0.1
10
2.5
2.0
1.5
1.0
0.5
0.0
1
4
-60 -40 -20
Fig. 3 - Typical Transfer Characteristics
I =
D
T = 25 C
J
-V
-1.8A
5
GS
T , Junction Temperature ( C)
J
°
, Gate-to-Source Voltage (V)
0
6
20 40 60 80 100 120 140 160
T = 150 C
J
7
Vishay Siliconix
V
20μs PULSE WIDTH
°
DS
8
= -50V
V
www.vishay.com
°
GS
9
=
-10V
10
3