IRFL210TRPBF Vishay, IRFL210TRPBF Datasheet
IRFL210TRPBF
Specifications of IRFL210TRPBF
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IRFL210TRPBF Summary of contents
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... W is possible in a typical surface mount application. SOT-223 SiHFL210-GE3 IRFL210PbF SiHFL210-E3 IRFL210 SiHFL210 = 25 °C, unless otherwise noted ° 100 °C C IRFL210, SiHFL210 Vishay Siliconix device design, low on-resistance SOT-223 a SiHFL210TR-GE3 a IRFL210TRPbF a SiHFL210T-E3 a IRFL210TR a SiHFL210T SYMBOL LIMIT V 200 DS V ± 0. 0.6 I 7.7 DM 0.025 0.017 0.96 ...
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... IRFL210, SiHFL210 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (T PARAMETER Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). ...
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... Pulse Width ° 91193_03 = 25 °C C 3.5 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 20 µs Pulse Width T = 150 ° 91193_04 Fig Normalized On-Resistance vs. Temperature = 150 °C C IRFL210, SiHFL210 Vishay Siliconix MIN. TYP. MAX 150 310 b - 0.60 1 ° 150 C ° ...
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... IRFL210, SiHFL210 Vishay Siliconix 300 MHz iss gs 250 rss oss ds 200 C iss 150 C oss 100 C 50 rss Drain-to-Source Voltage ( 91193_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 3 100 Total Gate Charge (nC) 91193_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted 91193_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91193 S10-1257-Rev. C, 31-May-10 125 150 Single Pulse (Thermal Response 0 Rectangular Pulse Duration (S) 1 IRFL210, SiHFL210 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRFL210, SiHFL210 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 120 100 100 Starting T , Junction Temperature (°C) 91193_12C J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...
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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91193. Document Number: 91193 S10-1257-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...