IRFL214PBF Vishay, IRFL214PBF Datasheet - Page 3

• Manufacturer Part Number: IRFL214PBF
• Description: MOSFET N-CH 250V 790MA SOT223
• Manufacturer: Vishay

Specifications of IRFL214PBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 470mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 790mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.79 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 790mA
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91194
S10-1257-Rev. C, 31-May-10
SPECIFICATIONS (T
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
J
= 25 °C, unless otherwise noted)
a
SYMBOL
V
I
Q
t
SM
I
t
SD
on
S
rr
rr
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
T
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
= 25 °C, I
TEST CONDITIONS
F
= 2.7 A, dI/dt = 100 A/μs
S
= 0.79 A, V
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 3 - Typical Transfer Characteristics
GS
G
= 0 V
b
D
S
IRFL214, SiHFL214
b
MIN.
-
-
-
-
-
Vishay Siliconix
TYP.
0.64
190
-
-
-
www.vishay.com
MAX.
0.79
390
6.3
2.0
1.3
S
and L
D
UNIT
)
μC
ns
A
V
3