SI7464DP-T1-E3 Vishay, SI7464DP-T1-E3 Datasheet

MOSFET N-CH 200V 1.8A PPAK 8SOIC

SI7464DP-T1-E3

Manufacturer Part Number
SI7464DP-T1-E3
Description
MOSFET N-CH 200V 1.8A PPAK 8SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI7464DP-T1-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
240 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Transistor Polarity
N Channel
Continuous Drain Current Id
2.8A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
260mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7464DP-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7464DP-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
1 855
Part Number:
SI7464DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Ordering Information: Si7464DP-T1-E3 (Lead (Pb)-free)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Guaranteed by design, not subject to production testing.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72052
S09-0227-Rev. C, 09-Feb-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Source Current
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
200
(V)
8
6.15 mm
D
7
D
6
D
PowerP AK SO-8
b
N-Channel 200-V (D-S) Fast Switching MOSFET
Si7464DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom V i e w
5
0.24 at V
D
0.26 at V
R
b
DS(on)
1
J
a
S
= 150 °C)
GS
a
GS
2
(Ω)
= 10 V
= 6 V
S
3
S
a
5.15 mm
4
G
c, d
A
I
= 25 °C, unless otherwise noted
D
2.8
2.7
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Low Thermal Resistance PowerPAK
• Primary Side Switch
Symbol
Symbol
T
R
R
Available
Package with Low 1.07 mm Profile
PWM Optimized For Fast Switching
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
®
Power MOSFETs
Typical
10 s
2.8
2.2
3.5
4.2
2.6
2.9
25
60
G
N-Channel MOSFET
- 55 to 150
± 20
0.45
200
260
8
3
D
S
Steady State
Maximum
1.8
1.5
1.5
1.8
1.1
3.5
30
70
Vishay Siliconix
Si7464DP
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI7464DP-T1-E3 Summary of contents

Page 1

... PowerP AK SO Bottom Ordering Information: Si7464DP-T1-E3 (Lead (Pb)-free) Si7464DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Continuous Source Current Pulsed Drain Current b Avalanche Current b Single Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si7464DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Gate Charge 150 ° 0.1 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72052 S09-0227-Rev. C, 09-Feb- °C J 0.6 0.8 1.0 Si7464DP Vishay Siliconix 800 C iss 600 400 200 C rss C oss Drain-to-Source Voltage (V) DS Capacitance 2 2 2.0 1.5 1.0 ...

Page 4

... Si7464DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0.4 0.0 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 μ 100 125 150 10 Limited DS(on D(on) Limited 0 °C A 0.01 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72052. Document Number: 72052 S09-0227-Rev. C, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7464DP Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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