SI4484EY-T1-E3 Vishay, SI4484EY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4484EY-T1-E3
• Description: MOSFET N-CH 100V 4.8A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4484EY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.034 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.9A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 34mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 3.8W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4484EY-T1-E3TR

Si4484EY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71189.
www.vishay.com
4
- 1.5
- 0.5
- 1.0
0.5
0.0
0.01
0.01
- 50
0.1
0.1
2
1
2
1
10
10
- 25
-4
-4
0.02
0.05
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.2
0.1
0
Threshold Voltage
25
T
J
- Temperature (°C)
10
Single Pulse
-3
50
Single Pulse
10
I
75
D
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
125
-2
150
175
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
50
40
30
20
10
1
0
0.01
-1
0.1
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
Time (s)
t
1
A
1
= P
S09-1341-Rev. D, 13-Jul-09
t
2
Document Number: 71189
DM
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 70 °C/W
100
600
10
600