IRF9Z20 Vishay, IRF9Z20 Datasheet - Page 4

• Manufacturer Part Number: IRF9Z20
• Description: MOSFET P-CH 50V 9.7A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9Z20

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z20

IRF9Z20, SiHF9Z20
Vishay Siliconix
www.vishay.com
4
90121_07
90121_06
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 6 - Typical Source-Drain Diode Forward Voltage
10
0.1
5.0
4.0
3.0
2.0
1.0
0.0
10
1
5
2
2
5
2
5
2
0
0
80 µs Pulse Test
V
Negative V
T
DS
J
= 150
< - 50 V
Negative I
2
4
°
C
SD
, Source-to-Drain Voltage (V)
T
J
= 25
4
8
D ,
Drain Current (A)
°
C
T
J
T
= 25
6
12
J
= 150
°
C
°
C
16
8
10
20
90121_08
90121_09
Fig. 8 - Normalized On-Resistance vs. Temperature
1.25
1.15
1.05
0.95
0.85
0.75
3.0
2.4
1.8
1.2
0.6
0.0
Fig. 7 - Breakdown Voltage vs. Temperature
- 60 - 40 - 20 0
- 60 - 40 - 20 0
I
D
I
V
D
= 1 mA
GS
= - 9.7 A
= - 10 V
T
T
J
J
, Junction Temperature (°C)
, Junction Temperature (°C)
20 40 60 80 100 120 140 160
20 40 60 80 100 120 140 160
S09-0074-Rev. A, 02-Feb-09
Document Number: 90121