IRF9Z20 Vishay, IRF9Z20 Datasheet - Page 6

• Manufacturer Part Number: IRF9Z20
• Description: MOSFET P-CH 50V 9.7A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9Z20

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z20

IRF9Z20, SiHF9Z20
Vishay Siliconix
www.vishay.com
6
Fig. 13a - Unclamped Inductive Test Circuit
90121_05
Fig. 15 - Switching Time Test Circuit
10
Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
0.1
10
-2
1
10
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
10
-4
Single Pulse
(Thermal Response)
10
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
Fig. 13b - Unclamped Inductive Load Test Waveforms
Fig. 16 - Gate Charge Test Circuit
0.1
Notes:
1. Duty Factor, D = t
2. Peak T
1
j
= P
P
DM
S09-0074-Rev. A, 02-Feb-09
DM
Document Number: 90121
x Z
t
1
1
thJC
/t
2
t
2
+ T
C
10