IRF830SPBF Vishay, IRF830SPBF Datasheet - Page 3
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IRF830SPBF
Manufacturer Part Number
IRF830SPBF
Description
MOSFET N-CH 500V 4.5A D2PAK
Manufacturer
Vishay
Datasheet
1.IRF830SPBF.pdf
(8 pages)
Specifications of IRF830SPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2.7A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
610pF @ 25V
Power - Max
74W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
1.5 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.5 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
1.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF830SPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91064
S-83030-Rev. A, 19-Jan-09
91064_01
91064_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
10
-1
-1
1
0
1
0
Top
Bottom
Top
Bottom
V
V
DS
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
, Drain-to-Source Voltage (V)
V
GS
0
GS
Drain-to-Source Voltage (V)
10
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
10
C
=
10
=
1
25 °C
150 °C
1
C
C
4.5 V
= 150 °C
4.5 V
= 25 °C
91064_03
91064_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
1
0
- 60 - 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= 3.1 A
150
= 10 V
V
5
GS ,
T
°
C
J ,
25
Junction Temperature (°C)
Gate-to-Source Voltage (V)
IRF830S, SiHF830S
°
C
6
20 40 60 80 100 120 140 160
7
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
9
www.vishay.com
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