IRF830SPBF Vishay, IRF830SPBF Datasheet - Page 4
![MOSFET N-CH 500V 4.5A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
IRF830SPBF
Manufacturer Part Number
IRF830SPBF
Description
MOSFET N-CH 500V 4.5A D2PAK
Manufacturer
Vishay
Datasheet
1.IRF830SPBF.pdf
(8 pages)
Specifications of IRF830SPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2.7A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
610pF @ 25V
Power - Max
74W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
1.5 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.5 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
1.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF830SPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRF830S, SiHF830S
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91064_06
91064_05
1500
1250
1000
750
500
250
20
16
12
0
8
4
0
10
0
0
I
D
= 3.1 A
V
DS ,
8
Q
V
G
DS
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
= 100 V
V
DS
16
V
C
C
C
= 250 V
GS
iss
rss
oss
V
= 0 V, f = 1 MHz
= C
= C
= C
DS
10
gs
gd
24
ds
= 400 V
1
+ C
C
C
C
+ C
iss
oss
rss
gd
gd
For test circuit
see figure 13
, C
32
ds
Shorted
40
Fig. 7 - Typical Source-Drain Diode Forward Voltage
91064_07
91064_08
10
10
10
10
Fig. 8 - Maximum Safe Operating Area
0.1
10
-2
0
1
1
2
5
2
5
2
5
2
5
2
0.4
0.1
2
V
V
5
SD
DS
1
150
, Source-to-Drain Voltage (V)
Operation in this area limited
0.6
, Drain-to-Source Voltage (V)
2
°
C
5
T
T
Single Pulse
C
J
10
= 150 °C
by R
= 25 °C
2
0.8
25
DS(on)
S-83030-Rev. A, 19-Jan-09
Document Number: 91064
5
°
C
10
2
2
1.0
5
10
100
1
10
10
V
ms
GS
µs
ms
3
µs
2
= 0 V
5
1.2
10
4