SI4423DY-T1-E3 Vishay, SI4423DY-T1-E3 Datasheet - Page 2
![MOSFET P-CH 20V 10A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4423DY-T1-E3
Manufacturer Part Number
SI4423DY-T1-E3
Description
MOSFET P-CH 20V 10A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4423DY-T1-E3.pdf
(6 pages)
Specifications of SI4423DY-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 14A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
900mV @ 600µA
Gate Charge (qg) @ Vgs
175nC @ 5V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0075 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
10 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-14A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
7.5mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-400mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4423DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4423DY-T1-E3
Manufacturer:
VISHAY
Quantity:
7 500
Company:
Part Number:
SI4423DY-T1-E3
Manufacturer:
VISHAY
Quantity:
16 590
Company:
Part Number:
SI4423DY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4423DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4423DY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Time
b
50
40
30
20
10
0
0
V
1
V
a
a
GS
DS
Output Characteristics
= 5 thru 2 V
a
- Drain-to-Source Voltage (V)
J
= 25 °C, unless otherwise noted
2
a
Symbol
R
V
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
3
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
V
V
I
1.5 V
D
DS
DS
≅ - 1 A, V
I
= - 10 V, V
F
= - 20 V, V
V
V
V
V
V
V
V
V
= - 2.1 A, dI/dt = 100 A/µs
V
DS
I
DS
GS
GS
GS
DS
S
DD
DS
DS
5
= - 2.7 A, V
Test Conditions
= - 5 V, V
= V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= - 10 V, I
= - 20 V, V
= - 10 V, R
= 0 V, V
GEN
GS
GS
GS
, I
= - 4.5 V, R
D
= - 5 V, I
= 0 V, T
GS
GS
= - 600 µA
D
D
D
D
GS
GS
L
= - 14 A
= ± 8 V
= - 4.5 V
= - 14 A
= - 13 A
= - 12 A
= 10 Ω
= 0 V
= 0 V
J
D
= 70 °C
= - 14 A
g
= 6 Ω
50
40
30
20
10
0
0.00
0.25
V
Min.
- 0.4
- 30
GS
Transfer Characteristics
0.50
- Gate-to-Source Voltage (V)
0.75
0.0071
25 °C
0.006
0.009
Typ.
- 0.6
T
116
165
460
210
105
3.2
60
16
27
75
C
S09-0705-Rev. D, 27-Apr-09
= 125 °C
Document Number: 72085
1.00
0.0075
0.0115
± 100
0.009
Max.
- 0.9
- 1.1
- 10
175
115
250
700
320
160
1.25
- 1
- 55 °C
1.50
Unit
nC
nA
µA
ns
Ω
Ω
V
A
S
V
1.75