SI4423DY-T1-E3 Vishay, SI4423DY-T1-E3 Datasheet - Page 3
![MOSFET P-CH 20V 10A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4423DY-T1-E3
Manufacturer Part Number
SI4423DY-T1-E3
Description
MOSFET P-CH 20V 10A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4423DY-T1-E3.pdf
(6 pages)
Specifications of SI4423DY-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 14A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
900mV @ 600µA
Gate Charge (qg) @ Vgs
175nC @ 5V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0075 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
10 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-14A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
7.5mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-400mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4423DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4423DY-T1-E3
Manufacturer:
VISHAY
Quantity:
7 500
Company:
Part Number:
SI4423DY-T1-E3
Manufacturer:
VISHAY
Quantity:
16 590
Company:
Part Number:
SI4423DY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4423DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72085
S09-0705-Rev. D, 27-Apr-09
0.015
0.012
0.009
0.006
0.003
0.000
100
0.1
10
1
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 13 A
0.2
On-Resistance vs. Drain Current
= 10 V
25
8
V
T
SD
Q
J
= 150 °C
g
- Source-to-Drain Voltage (V)
I
0.4
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
16
50
0.6
V
GS
24
= 1.8 V
75
0.8
V
V
GS
GS
= 2.5 V
= 4.5 V
T
100
J
32
= 25 °C
1.0
1.2
125
40
12000
10000
0.030
0.024
0.018
0.012
0.006
0.000
8000
6000
4000
2000
1.6
1.4
1.2
1.0
0.8
0.6
- 5 0
0
0.0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 13 A
C
= 4.5 V
1.6
rss
4
T
0
J
V
V
GS
- Junction T emperature (°C)
DS
- Gate-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
2 5
iss
Capacitance
C
3.2
oss
8
I
D
5 0
= 13 A
Vishay Siliconix
4.8
12
7 5
Si4423DY
100
www.vishay.com
6.4
16
125
150
8.0
20
3