IRF620 Vishay, IRF620 Datasheet

MOSFET N-CH 200V 5.2A TO-220AB

IRF620

Manufacturer Part Number
IRF620
Description
MOSFET N-CH 200V 5.2A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF620

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.8 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.2 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF620
IRF620IR

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91027
S11-0510-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 5.2 A, dI/dt  95 A/μs, V
= 50 V, starting T
()
TO-220AB
G
a
D
J
S
= 25 °C, L = 6.1 mH, R
c
a
a
DD
b
V
 V
GS
= 10 V
DS
G
, T
N-Channel MOSFET
J
 150 °C.
Single
200
3.0
7.9
14
This datasheet is subject to change without notice.
g
= 25 , I
D
S
C
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.80
GS
AS
6-32 or M3 screw
at 10 V
= 5.2 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220AB
IRF620PbF
SiHF620-E3
IRF620
SiHF620
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
DM
I
AR
DS
GS
AR
D
AS
D
stg
design,
- 55 to + 150
IRF620, SiHF620
LIMIT
300
± 20
0.40
200
110
5.2
3.3
5.2
5.0
5.0
1.1
18
50
10
low
www.vishay.com/doc?91000
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRF620 Summary of contents

Page 1

... C SYMBOL ° 100 ° °C C dV/dt T for screw = 25  5.2 A (see fig. 12  150 °C. This datasheet is subject to change without notice. IRF620, SiHF620 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance LIMIT UNIT V 200 ± 5 3 0.40 W/° ...

Page 2

... IRF620, SiHF620 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Fig Typical Transfer Characteristics C 3 2.5 2.0 4.5 V 1.5 1.0 0.5 150 ° 91027_04 = 150 °C C Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. IRF620, SiHF620 Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( 4.8 A ...

Page 4

... IRF620, SiHF620 Vishay Siliconix 750 MHz iss rss gd 600 oss ds gd 450 C iss 300 C oss 150 C rss Drain-to-Source Voltage ( 91027_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 4 100 Total Gate Charge (nC) 91027_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 5

... Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms 0 Rectangular Pulse Duration ( Fig. 12b - Unclamped Inductive Waveforms This datasheet is subject to change without notice. IRF620, SiHF620 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 d(on) r d(off ...

Page 6

... IRF620, SiHF620 Vishay Siliconix 91027_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 300 Top 2.3 A 250 3.3 A Bottom 5.2 A 200 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ Fig For N-Channel This datasheet is subject to change without notice. IRF620, SiHF620 Vishay Siliconix + www.vishay.com www.vishay.com/doc?91000 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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