IRF620 Vishay, IRF620 Datasheet - Page 3
![MOSFET N-CH 200V 5.2A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF620
Manufacturer Part Number
IRF620
Description
MOSFET N-CH 200V 5.2A TO-220AB
Manufacturer
Vishay
Datasheet
1.IRF620.pdf
(8 pages)
Specifications of IRF620
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.8 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.2 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF620
IRF620IR
IRF620IR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF620
Manufacturer:
SEC
Quantity:
20 000
Part Number:
IRF6201PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF620A
Manufacturer:
FAIRCHILD
Quantity:
9
Company:
Part Number:
IRF620A
Manufacturer:
IR
Quantity:
12 500
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91027
S11-0510-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91027_01
91027_02
10
10
10
10
10
10
10
10
Fig. 1 - Typical Output Characteristics, T
Fig. 2 - Typical Output Characteristics, T
-2
-1
-1
-2
0
1
0
1
10
-2
Top
Bottom
Top
Bottom
V
V
DS ,
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
V
V
, Drain-to-Source Voltage (V)
10
GS
GS
Drain-to-Source Voltage (V)
-1
-1
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
150 °C
10
10
This datasheet is subject to change without notice.
1
1
4.5 V
4.5 V
C
C
= 25 °C
= 150 °C
91027_03
91027_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
-1
1
0
Fig. 3 - Typical Transfer Characteristics
- 60 - 40 - 20 0
4
I
V
D
150
GS
= 4.8 A
= 10 V
°
V
C
5
T
GS ,
25
J ,
Junction Temperature (°C)
°
Gate-to-Source Voltage (V)
C
6
20 40 60 80 100 120 140 160
IRF620, SiHF620
7
www.vishay.com/doc?91000
Vishay Siliconix
20 µs Pulse Width
V
8
DS
=
50 V
9
www.vishay.com
10
3