IRFD110 Vishay, IRFD110 Datasheet - Page 2

• Manufacturer Part Number: IRFD110
• Description: MOSFET N-CH 100V 1A 4-DIP
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFD110

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 600mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.54Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 1A
• Power Dissipation: 1.3W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Package Type: HexDIP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFD110; IRFD111; IRFD112

IRFD110, SiHFD110
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
L
L
SM
t
I
t
t
on
DS
oss
SD
thJA
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
J
GS
GS
V
R
= 25 °C, I
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
g
J
Reference to 25 °C, I
= 10 V
= 10 V
= 24 , R
= 25 °C, I
= 80 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DS
TEST CONDITIONS
DS
DS
GS
DD
-
= 50 V, I
F
= 100 V, V
= V
= 0 V, I
= 50 V, I
V
= 5.6 A, dI/dt = 100 A/μs
V
V
GS
D
DS
S
GS
GS
GS
I
= 8.4 , see fig. 10
= 1.0 A, V
D
= ± 20 V
= 25 V,
, I
= 0 V, T
= 0 V,
= 5.6 A, V
see fig. 6 and 13
D
D
D
D
= 250 μA
I
= 250 μA
= 0.60 A
D
GS
= 5.6 A,
= 0.60 A
D
= 0 V
J
GS
= 1 mA
= 150 °C
DS
G
G
= 0 V
b
= 80 V,
b
MAX.
b
D
S
b
b
120
D
S
b
MIN.
0.80
100
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2466-Rev. C, 25-Oct-10
Document Number: 91127
TYP.
0.12
0.44
180
100
6.9
9.4
4.0
6.0
81
15
16
15
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.54
0.88
250
200
4.0
8.3
2.3
3.8
1.0
8.0
2.5
S
25
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V