IRFD110 Vishay, IRFD110 Datasheet - Page 5

• Manufacturer Part Number: IRFD110
• Description: MOSFET N-CH 100V 1A 4-DIP
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFD110

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 600mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.54Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 1A
• Power Dissipation: 1.3W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Package Type: HexDIP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFD110; IRFD111; IRFD112

Document Number: 91127
S10-2466-Rev. C, 25-Oct-10
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
91127_09
1.0
0.8
0.6
0.4
0.2
0.0
91127_11
25
10
10
10
0.1
10
-2
50
2
1
3
10
T
A
-5
0.2
0.1
0.01
0 - 0.5
0.05
0.02
, Ambient Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
75
10
100
-4
Single Pulse
(Thermal Response)
125
10
-3
150
t
175
1
, Rectangular Pulse Duration (s)
10
-2
0.1
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
1
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
GS
t
d(on)
V
IRFD110, SiHFD110
10
DS
Notes:
1. Duty Factor, D = t
2. Peak T
t
r
j
D.U.T.
= P
P
DM
10
DM
Vishay Siliconix
R
2
D
x Z
t
d(off)
t
1
1
thJC
/t
2
t
t
+ T
2
f
+
-
www.vishay.com
C
10
V
DD
3
5