IRFD120 Vishay, IRFD120 Datasheet - Page 4

• Manufacturer Part Number: IRFD120
• Description: MOSFET N-CH 100V 1.3A 4-DIP
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFD120

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 780mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 360pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.27Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 1.3A
• Power Dissipation: 1.3W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Package Type: HexDIP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFD120; IRFD121; IRFD122

IRFD120, SiHFD120
Vishay Siliconix
www.vishay.com
4
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
T
T
T
T
SINGLE PULSE
SINGLE PULSE
A
A
J
J
= 175 °C
= 175 °C
= 25 °C
= 25 °C
S10-2462-Rev. C, 08-Nov-10
Document Number: 91128