IRFD120 Vishay, IRFD120 Datasheet - Page 8

• Manufacturer Part Number: IRFD120
• Description: MOSFET N-CH 100V 1.3A 4-DIP
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFD120

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 780mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 360pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.27Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 1.3A
• Power Dissipation: 1.3W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Package Type: HexDIP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFD120; IRFD121; IRFD122

HVM DIP (High voltage)
Note
1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.
Document Number: 91361
Revision: 06-Sep-10
ECN: X10-0386-Rev. B, 06-Sep-10
DWG: 5974
DIM.
A
E
L
0.017 [0.43]
0.013 [0.33]
0.094 [2.38]
0.086 [2.18]
0.043 [1.09]
0.035 [0.89]
0.310
0.300
0.270
MIN.
0.248 [6.29]
0.240 [6.10]
E max.
E min.
0° to 15°
2 x
INCHES
0.133 [3.37]
0.125 [3.18]
2 x
MAX.
0.330
0.425
0.290
0.045 [1.14]
0.035 [0.89]
0.100 [2.54] typ.
A
L
0.197 [5.00]
0.189 [4.80]
MIN.
Package Information
7.87
7.62
6.86
0.024 [0.60]
0.020 [0.51]
MILLIMETERS
0.160 [4.06]
0.140 [3.56]
0.180 [4.57]
0.160 [4.06]
Vishay Siliconix
4 x
MAX.
10.79
www.vishay.com
8.38
7.36
1