IRF9530STRLPBF Vishay, IRF9530STRLPBF Datasheet - Page 6

• Manufacturer Part Number: IRF9530STRLPBF
• Description: MOSFET P-CH 100V 12A D2PAK
• Manufacturer: Vishay

Specifications of IRF9530STRLPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.3 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 3.7 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9530S, SiHF9530S
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
g
Q
V
GS
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T.
0.01 Ω
91077_12c
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
1200
1000
800
600
400
200
0
25
V
DD
Starting T
= - 25 V
50
+
-
V
DD
J
, Junction Temperature (°C)
75
100
125
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
150
V
I
- 4.9 A
- 8.5 A
- 12 A
AS
DS
12 V
I
Fig. 13b - Gate Charge Test Circuit
V
D
GS
Same type as D.U.T.
175
Current regulator
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S10-1728-Rev. B, 02-Aug-10
Document Number: 91077
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD