IRFR9010 Vishay, IRFR9010 Datasheet - Page 5
![MOSFET P-CH 50V 5.3A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR9010
Manufacturer Part Number
IRFR9010
Description
MOSFET P-CH 50V 5.3A DPAK
Manufacturer
Vishay
Series
HEXFET®r
Specifications of IRFR9010
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
9.1nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 25V
Power - Max
25W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Drain-source Breakdown Voltage
50 V
Continuous Drain Current
5.3 A
Mounting Style
SMD/SMT
Continuous Drain Current Id
-5.3A
Drain Source Voltage Vds
-50V
On Resistance Rds(on)
350mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR9010
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR9010
Manufacturer:
IR
Quantity:
13 600
Company:
Part Number:
IRFR9010PBF
Manufacturer:
VISHAY
Quantity:
3 398
Part Number:
IRFR9010TR
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFR9010TRPBF
Manufacturer:
VISHAY
Quantity:
7 938
Document Number: 91378
S10-1135-Rev. C, 10-May-10
Fig. 12 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Typical On-Resistance vs. Drain Current
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Fig. 13a - Maximum Avalanche vs. Starting Junction
Vary t
required I
Fig. 13b - Unclamped Inductive Test Circuit
Fig. 13c - Unclamped Inductive Waveforms
V
I
AS
DS
p
to obtain
L
R
- 10 V
g
V
DS
Temperature
t
p
I
L
t
p
D.U.T.
I
L
0.05 Ω
L
Vishay Siliconix
V
DS
V
DD
www.vishay.com
+
-
V
DD
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