IRFR9010 Vishay, IRFR9010 Datasheet - Page 7
![MOSFET P-CH 50V 5.3A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR9010
Manufacturer Part Number
IRFR9010
Description
MOSFET P-CH 50V 5.3A DPAK
Manufacturer
Vishay
Series
HEXFET®r
Specifications of IRFR9010
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
9.1nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 25V
Power - Max
25W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Drain-source Breakdown Voltage
50 V
Continuous Drain Current
5.3 A
Mounting Style
SMD/SMT
Continuous Drain Current Id
-5.3A
Drain Source Voltage Vds
-50V
On Resistance Rds(on)
350mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR9010
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR9010
Manufacturer:
IR
Quantity:
13 600
Company:
Part Number:
IRFR9010PBF
Manufacturer:
VISHAY
Quantity:
3 398
Part Number:
IRFR9010TR
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFR9010TRPBF
Manufacturer:
VISHAY
Quantity:
7 938
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91378.
Document Number: 91378
S10-1135-Rev. C, 10-May-10
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
• Compliment N-Channel of D.U.T. for driver
Note
a. V
Note
D.U.T. V
Driver gate drive
D.U.T. l
Inductor current
GS
= - 5 V for logic level and - 3 V drive devices
P.W.
SD
DS
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Body diode forward drop
Ripple ≤ 5 %
Period
Body diode forward
+
-
Fig. 17 - For P-Channel
• dV/dt controlled by R
• I
• D.U.T. - device under test
current
Diode recovery
SD
controlled by duty factor “D”
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
dV/dt
current transformer
dI/dt
D =
-
g
Period
P.W.
+
I
V
SD
V
GS
DD
= - 10 V
+
-
V
DD
a
Vishay Siliconix
www.vishay.com
7